bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 1 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal zener diodes features ? silicon planar zener diodes ? the zener voltages are graded according to the international e24 standard ? aec-q101 qualified ? esd capability according to aec-q101: human body model > 8 kv machine model > 800 v ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 primary characteristics parameter value unit v z range nom. 2.4 to 75 v test current i zt 2.5; 5 ma v z specification pulse current int. construction single ordering information device name ordering code taped units per reel minimum order quantity bzt52-series bzt52c2v4-e3-08 to bzt52c75-e3-08 3000 (8 mm tape on 7" reel) 15 000/box bzt52b2v4-e3-08 to bzt52b75-e3-08 bzt52c2v4-he3-08 to bzt52c75-he3-08 bzt52b2v4-he3-08 to bzt52b75-he3-08 bzt52c2v4-e3-18 to bzt52c75-e3-18 10 000 (8 mm tape on 13" reel) 10 000/box bzt52b2v4-e3-18 to bzt52b75-e3-18 bzt52c2v4-he3-18 to bzt52c75-he3-18 bzt52b2v4-he3-18 to bzt52b75-he3-18 package package name weight molding compound flammability rating moisture sensitivity level soldering conditions sod-123 10.3 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit power dissipation diode on ceramic substrate 0.7 mm; 5 mm 2 pad areas p tot 500 mw diode on ceramic substrate 0.7 mm; 2.5 mm 2 pad areas p tot 410 mw zener current see table ?electrical characteristics ? thermal resistance junction to ambient air valid provided that electrodes are kept at ambient temperature r thja 300 k/w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c operating temperature range t op - 55 to + 150 c
bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 2 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ?i zt1 = 5 ma, i zt2 = 1 ma (1) measured with pulses t p = 5 ms (2) i zt1 = 2.5 ma (3) i zt2 = 0.5 ma (4) valid provided that electrodes are kept at ambient temperature electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range (1) test current reverse voltage dynamic resistance temp. coefficient admissable zener current (4) v z at i zt1 i zt1 i zt2 v r at i r z z at i zt1 z zk at i zt2 ? vz i z at t amb = 45 c i z at t amb = 25 c v ma v na ? 10 -4 /c ma min. nom. max. bzt52c2v4 w1 2.2 2.4 2.6 5 1 - - 85 600 - 9 to - 4 - - bzt52c2v7 w2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 - 9 to - 4 113 134 bzt52c3v0 w3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 - 9 to - 3 98 118 bzt52c3v3 w4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 - 8 to - 3 92 109 bzt52c3v6 w5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 - 8 to - 3 85 100 bzt52c3v9 w6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 - 7 to - 3 77 92 bzt52c4v3 w7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 - 6 to - 1 71 84 bzt52c4v7 w8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 - 5 to + 2 64 76 bzt52c5v1 w9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 - 3 to + 4 56 67 bzt52c5v6 wa 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 - 2 to + 6 50 59 bzt52c6v2 wb 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 - 1 to + 7 45 54 bzt52c6v8 wc 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 + 2 to + 7 41 49 bzt52c7v5 wd 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 + 3 to + 7 37 44 bzt52c8v2 we 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 + 4 to + 7 34 40 bzt52c9v1 wf 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 + 5 to + 8 30 36 bzt52c10 wg 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 + 5 to + 8 28 33 bzt52c11 wh 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25 30 bzt52c12 wi 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 + 6 to + 9 23 28 bzt52c13 wk 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21 25 bzt52c15 wl 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19 23 bzt52c16 wm 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17 20 bzt52c18 wn 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15 18 bzt52c20 wo 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14 17 bzt52c22 wp 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13 16 bzt52c24 wr 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11 13 bzt52c27 ws 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10 12 bzt52c30 wt 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10 9 10 bzt52c33 wu 31 33 35 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10 8 9 bzt52c36 ww 34 36 38 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8 9 bzt52c39 wx 37 39 41 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7 8 bzt52c43 wy 40 43 46 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6 7 bzt52c47 wz 44 47 50 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5 6 bzt52c51 x1 48 51 54 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5 6 bzt52c56 x2 52 56 60 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) -- bzt52c62 x3 58 62 66 2.5 0.5 - - < 150 (2) < 1000 (3) typ. +10 (2) -- bzt52c68 x4 64 68 72 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) -- bzt52c75 x5 70 75 79 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) --
bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 3 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ?i zt1 = 5 ma, i zt2 = 1 ma (1) measured with pulses t p = 5 ms (2) i zt1 = 2.5 ma (3) i zt2 = 0.5 ma (4) valid provided that electrodes are kept at ambient temperature electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range (1) test current reverse voltage dynamic resistance temp. coefficient admissable zener current (4) v z at i zt1 i zt1 i zt2 v r at i r z z at i zt1 z zk at i zt2 ? vz i z at t amb = 45 c i z at t amb = 25 c v ma v na ? 10 -4 /c ma min. nom. max. bzt52b2v4 w1 2.35 2.4 2.45 5 1 - - 85 600 - 9 to - 4 - - bzt52b2v7 w2 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 - 9 to - 4 113 134 bzt52b3v0 w3 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 - 9 to - 3 98 118 bzt52b3v3 w4 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 - 8 to - 3 92 109 bzt52b3v6 w5 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 - 8 to - 3 85 100 bzt52b3v9 w6 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 - 7 to - 3 77 92 bzt52b4v3 w7 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 - 6 to - 1 71 84 bzt52b4v7 w8 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 - 5 to + 2 64 76 bzt52b5v1 w9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 - 3 to + 4 56 67 bzt52b5v6 wa 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 - 2 to + 6 50 59 bzt52b6v2 wb 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 - 1 to + 7 45 54 bzt52b6v8 wc 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 + 2 to + 7 41 49 bzt52b7v5 wd 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 + 3 to + 7 37 44 bzt52b8v2 we 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 + 4 to + 7 34 40 bzt52b9v1 wf 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 + 5 to + 8 30 36 bzt52b10 wg 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 + 5 to + 8 28 33 bzt52b11 wh 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25 30 bzt52b12 wi 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 + 6 to + 9 23 28 bzt52b13 wk 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21 25 bzt52b15 wl 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19 23 bzt52b16 wm 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17 20 bzt52b18 wn 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15 18 bzt52b20 wo 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14 17 bzt52b22 wp 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13 16 bzt52b24 wr 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11 13 bzt52b27 ws 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10 12 bzt52b30 wt 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10 9 10 bzt52b33 wu 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10 8 9 bzt52b36 ww 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8 9 bzt52b39 wx 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7 8 bzt52b43 wy 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6 7 bzt52b47 wz 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5 6 bzt52b51 x1 50 51 52 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5 6 bzt52b56 x2 54.9 56 57.1 2.5 0.5 - - < 135 (2) < 1000 (3) typ. + 10 (2) -- bzt52b62 x3 60.8 62 63.2 2.5 0.5 - - < 150 (2) < 1000 (3) typ. + 10 (2) -- bzt52b68 x4 66.6 68 69.4 2.5 0.5 - - < 200 (2) < 1000 (3) typ. + 10 (2) -- bzt52b75 x5 73.5 75 76.5 2.5 0.5 - - < 250 (2) < 1500 (3) typ. + 10 (2) --
bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 4 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward characteristics fig. 2 - admissible power dissipati on vs. ambient temperature fig. 3 - dynamic resistance vs. zener current fig. 4 - dynamic resistance vs. zener current fig. 5 - dynamic resistance vs. zener current fig. 6 - thermal differential resistance vs. zener voltage 18114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0.8 1 v t j = 100 c t j = 25 c 18888 500 400 300 200 100 0 mw p tot 200 100 0c t am b 18117 1000 5 4 3 2 5 4 3 2 100 1 r zj 0.1 25 25 110 i z t j = 25 c 2.7 5 4 3 2 10 25 100 ma 3.6 4.7 5.1 5.6 t j = 25 c 33 27 22 18 15 12 10 6.8/8.2 6.2 18120 10 3 7 5 4 3 2 7 5 4 3 2 10 0.1 2345 2345 110 ma r zj i z t j = 25 c 47 + 51 43 39 36 10 2 18121 10 3 5 4 3 2 5 4 3 2 10 2 1 r zth 5 4 3 2 10 1 2345 2345 10 100 v v z at i z = 5 ma negati v e positi v e v z t j r zth = r tha x v z x
bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 5 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - dynamic resistance vs. zener voltage fig. 8 - temperature dependence of zener voltage vs. zener voltage fig. 9 - change of zener voltage vs. junction temperature fig. 10 - temperature dependence of zener voltage vs. zener voltage fig. 11 - change of zener voltage vs. junction temperature fig. 12 - change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage 18122 100 7 5 4 3 2 7 5 4 3 2 1 r zj 10 t j = 25 c i z = 5 ma 1 2345 2345 10 100 v v z 18135 25 20 15 10 5 0 - 5 m v /c v z t j 1 2345 2345 10 100 v v z at i z = 5 ma v 27 v , i = 2 ma 5 ma 1 ma 20 ma i z = 18124 v z at i z = 5 ma 25 15 10 8 7 6.2 5.9 5.6 5.1 4.7 3.6 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 1 - 0.2 v z v t j 020406080 100 120 140 c 18136 100 80 60 40 20 0 m v /c v z t j 0 20 40 80 60 100 v v z at i z = 2 ma i z = 5 ma 18158 0 20 40 60 80 100 120 140 c 9 8 7 6 5 4 3 2 1 0 - 1 v v z at i z = 5 ma i z = 5 ma v z t j 51 43 36 v 18159 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 0.2 - 0.4 1 10 100 v v z v z at i z = 5 ma v z = r zth x i z i z = 5 ma v z >= 56 v; i z = 2.5 ma
bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 6 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage fig. 14 - breakdown characteristics fig. 15 - breakdown characteristics fig. 16 - breakdown characteristics 18160 5 4 3 2 1 0 v v z 0 20 40 60 80 100 v v z at i z = 5 ma i z = 5 ma i z = 2.5 ma v z = r zth x i z 18111 test c u rrent i z 5 ma 1 23456789 0 10 v v z 3.3 3.9 5.6 2.7 ma 50 40 30 20 10 0 l z t j = 25 c 8.2 6.8 4.7 18112 10 20 30 0 40 v v z ma 30 20 10 0 l z 33 test c u rrent i z 5 ma t j = 25 c 10 12 15 18 22 27 36 18157
bzt52-series www.vishay.com vishay semiconductors rev. 1.8, 26-feb-13 7 document number: 85760 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) 0.85 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.018) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.008) 0 to 8 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s8- v -3910.01-001 (4) 17432
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